Temperature dependent I-V characterization of Coronene/p-Si based heterojunctions: Space charge limited current, Schottky emission at high voltages, thermionic emission and pool-Frenkel emission at low voltages

摘要

A Heterojunction of Au/Coronene/p-Si/Al was fabricated by thermal evaporation technique. The features of current-voltage (I-V) were examined under dark condition at several temperatures in 292-373 K range. Extensive analysis of I-V curves in forward bias demonstrated that the mechanisms of thermionic emission and space charge limited currents represent the dominant mechanisms in the low and high range of used voltages, respectively. The reverse I-V curves were interpreted via Poole- Frenkel and Schottky effects. Some specific parameters were estimated as diode ideality factor, series resistance and shunt resistance. The photovoltaic manner of Coronene/p-Si heterojunction was shown under illumination. The cell parameters were evaluated from the analysis; open circuit voltage, short circuit current and fill factor.