Ionic liquid gated poly(triaryl amine) thin film field effect transistor

摘要

A poly(triaryl amine) thin film field effect transistor was investigated in air with ionic liquid (IL) gating for the first time. The transistor retained a high-on/off ratio of similar to 700 and mobility of similar to 10(-2) cm(2)/V-s. When compared to a transistor based on the conducting polymer polyaniline under similar operating conditions, it was found to exhibit superior performance. Significantly low-operating voltages (+/- 1 V) enhances the possibility of its use in organic electronics. The device was successfully tested for binary operation, and we demonstrate its suitability for use in low-power consumption electronic circuits.