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Deterministic One-to-One Synthesis of Germanium Nanowires and Individual Gold Nanoseed Patterning for Aligned Nanowire Arrays

机译:锗纳米线的确定性一对一合成和对准的纳米线阵列的单个金纳米种子图案。

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Germanium nanowires (GeNWs) have attracted much attention in recent years[1]-[9] owing to the advanced electrical properties of germanium, such as high carrier mobilities,[10] and the facile chemical synthesis of single-crystal GeNWs at relatively low temperatures (well below 400 °C).[5] Various synthetic methods for crystalline GeNWs that use gold nanoparticles as seeds have been reported and include chemical vapor deposition (CVD),[5], [8], [9], [11] physical vapor deposition (PVD),[2], [3] and solvothermal reactions.[1], [4] Nevertheless, one-to-one growth (1-1 growth) in which each gold particle seed produces one nanowire[12] and the chemistry needed for such growth is not well-established for GeNWs. To achieve this goal is important for the deterministic synthesis of nanowires with controlled yield, size, growth locations, and orientations.
机译:锗纳米线(GeNWs)近年来受到了很多关注[1]-[9],这归因于锗的先进电学性质,例如高载流子迁移率[10]和相对较低的单晶GeNWs的化学合成。温度(远低于400°C)。[5]已经报道了使用金纳米颗粒作为种子的各种结晶GeNW的合成方法,包括化学气相沉积(CVD),[5],[8],[9],[11]物理气相沉积(PVD),[2], [3]和溶剂热反应。[1],[4]然而,一对一的生长(1-1生长),其中每个金粒子种子产生一条纳米线[12],并且这种生长所需的化学物质并不理想-为GeNW建立。要实现此目标,对于确定产量,尺寸,生长位置和方向受控的纳米线的确定性合成至关重要。

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