Measurement and analysis of ballistic-diffusive phonon heat transport in a constrained silicon film

摘要

A suspended microdevice was fabricated to measure the ballistic thermal resistance of a constrained silicon film, which had a cross-section of 4.6 mu m x 210 nm and a length of 22 mu m. To better understand this phenomenon, the frequency dependent Boltzmann transport equation was numerically solved for a three-dimensional model using finite element analysis combined with the discrete ordinate method and the frequency dependence of phonons, and this was compared to the calculation results based on a previous study involving the analytical solution of the modified Boltzmann transport equation. The effect of ballistic phonons at a nanoconstriction with a width of 160 nm was also predicted using two theoretical methods in order to more clearly estimate the effect of ballistic phonons.