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Nanocrystalline Boron-Doped Diamond as a Corrosion-Resistant Anode for Water Oxidation via Si Photoelectrodes

机译:纳米晶体硼掺杂金刚石作为通过Si光电极进行水氧化的耐腐蚀阳极

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Due to its high sensitivity to corrosion, the use of Si in direct photoelectrochemical (PEC) water-splitting systems that convert solar energy into chemical fuels has been greatly limited. Therefore, the development of low-cost materials resistant to corrosion under oxidizing conditions is an important goal toward a suitable protection of otherwise unstable semiconductors used in PEC cells. Here, we report on the development of a protective coating based on thin and electrically conductive nanocrystalline boron-doped diamond (BDD) layers. We found that BDD layers protect the underlying Si photoelectrodes over a wide pH range (1-14) in aqueous electrolyte solutions. A BDD layer maintains an efficient charge carrier transfer from the underlying silicon to the electrolyte solution. SiIBDD photo electrodes show no sign of performance degradation after a continuous PEC treatment in neutral, acidic, and basic electrolytes. The deposition of a cobalt phosphate (CoPi) oxygen evolution catalyst onto the BDD layer significantly reduces the overpotential for water oxidation, demonstrating the ability of BDD layers to substitute the transparent conductive oxide coatings, such as indium tin oxide (ITO) and fluorine-doped tin oxide (FTO), frequently used as protective layers in Si photoelectrodes.
机译:由于其对腐蚀的高敏感性,使用Si在直接光电化学(PEC)水分裂系统中,将太阳能转化为化学燃料的含水化学燃料已受到极大的限制。因此,在氧化条件下耐腐蚀的低成本材料的发展是涉及PEC细胞中使用的其他不稳定半导体的重要目标。在这里,我们报告了基于薄和导电纳米晶体硼掺杂金刚石(BDD)层的保护涂层的开发。我们发现BDD层在水性电解质溶液中保护底层的Si光电系数在宽的pH范围内(1-14)。 BDD层将从底层硅转移到电解质溶液中的有效电荷载体转移。 Siibdd光电极显示在中性,酸性和基本电解质中连续的PEC处理后的性能降解的迹象。将磷酸盐(COPI)氧化氧化催化剂沉积在BDD层上显着降低了水氧化的过电位,证明了BDD层替代透明导电氧化物涂层,例如氧化铟锡(ITO)和氟掺杂的能力氧化锡(FTO),经常用作Si光电子中的保护层。

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