首页> 外文期刊>ACS applied materials & interfaces >Controlled Enhancement in Hole Injection at Gold-Nanoparticle-on-Organic Electrical Contacts Fabricated by Spark-Discharge Aerosol Technique
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Controlled Enhancement in Hole Injection at Gold-Nanoparticle-on-Organic Electrical Contacts Fabricated by Spark-Discharge Aerosol Technique

机译:通过火花 - 放电气溶胶技术制造的金纳米粒子上有机电触点的孔注射的控制增强

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摘要

We demonstrate that hole injection from a top electrode composed of Au nanoparticles (AuNPs) capped with a thick Au layer into an underlying organic semiconductor, N,N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolylamino)-phenyl]-biphenyl-4,4'-diamine (DNTPD), is significantly enhanced compared to that in a control device whose top electrode is composed entirely of a thick Au layer. The fabrication of this organic hole-only device with the AuNP electrode is made possible by dry, room-temperature distribution of AuNPs onto DNTPD using a spark-discharge aerosol technique capable of varying the average diameter ((D) over bar) of the AuNPs. The enhancement in hole injection is found to increase with decreasing (D) over bar, with the current density of a device with (D) over bar = 1.1 nm being more than 3 orders of magnitude larger than that of the control device. Intensity-modulated photocurrent measurements show that the built-in potentials of the devices with the AuNP electrode are smaller than that of the control device by as much as 0.68 V, indicating that the enhanced hole injection originates from the increased work functions of these devices, which in turn decreases the hole injection barrier heights. X-ray photoelectron spectroscopy reveals that the increased work functions of the AuNP electrodes are due to surface oxidation of the AuNPs resulting in AuN and Au3N. The degree of oxidation of the AuNPs increases with decreasing (D) over bar, consistent with the (D) over bar -dependencies of the hole injection enhancement and the built-in potential reduction.
机译:我们证明,从由厚的Au层覆盖的Au纳米粒子(aUnps)组成的顶电极的空穴注入到底层有机半导体中,n,n'-二苯基-n,n'-bis- [4-(苯基-m-与其顶电极完全由厚AU层组成的控制装置相比,托基氨基) - 苯基-4,4'-二胺(DNTPD)显着提高。使用能够改变AUNPS的平均直径((d)的AUNPS((d)的火花放电气溶胶技术,通过干燥,室温,通过干燥,室温分布,使得具有AUNP电极的有机孔电极的制造。 。发现空穴注入的增强随着杆的减小(d)而增加,其中具有(d)的电流密度通过杆= 1.1nm,比控制装置大于3大于3的数量级。强度调制的光电流测量表明,具有AUNP电极的器件的内置电位小于控制装置的电位多达0.68 V,表明增强孔注射源自这些器件的增加的工作功能,这反过来又减少了空穴注入屏障高度。 X射线光电子能谱揭示了AUNP电极的增加的功函数是由于AUNP的表面氧化,导致AUN和AU3N。剖腹产的氧化程度随着(D)上的减少而增加,与空穴注入增强的(d)持续的(d)一致。

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