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首页> 外文期刊>ACS applied materials & interfaces >Transparent and Colorless Polyimides Containing Multiple Trifluoromethyl Groups as Gate Insulators for Flexible Organic Transistors with Superior Electrical Stability
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Transparent and Colorless Polyimides Containing Multiple Trifluoromethyl Groups as Gate Insulators for Flexible Organic Transistors with Superior Electrical Stability

机译:透明和无色聚酰亚胺,含有多个三氟甲基作为栅极绝缘体,用于柔性有机晶体管,具有优异的电稳定性

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摘要

A suitable insulating polymer material that is compatible with the fabrication process of organic transistors and has excellent electrical properties is critically required for the next-generation flexible organic electronics. In this study, using a one-step polymerization method, we synthesized two different solution-processable polyimides (PIs) incorporated with abundant trifluoromethyl groups. Not only were the two resulting PIs.termed 6FDA-6FDAM-PI and 6FDA-TFMB-PI.well soluble in organic solvents, but also they showed transparent and colorless optical properties. The fluorinated PI films showed smooth surface topographies and surface energy values that were appropriate for their use in bottom-gate organic transistors. Organic transistors separately fabricated with 6FDA-6FDAM-PI and 6FDA-TFMB-PI as the gate insulators showed excellent device performance and electrical stability under various testing conditions, especially for pentacene-based devices. The excellent performance of the devices with fluorinated PIs was attributed to the enhanced microstructure of the organic semiconductor and the fluorine-rich characteristic of the underlying gate insulator. Furthermore, organic complementary circuits including the basic logic gates of NOT, NOR, and NAND were demonstrated using these devices.
机译:与有机晶体管的制造工艺相容的合适的绝缘聚合物材料具有优异的电性能,对下一代柔性有机电子产品具有优异的电性能。在该研究中,使用一步聚合方法,我们合成了与丰富的三氟甲基掺入的两种不同的溶液加工聚酰亚胺(PIS)。不仅是两个得到的PIS.termed 6FDA-6FDAM-PI和6FDA-TFMB-PI.WELL溶于有机溶剂,还显示出透明和无色的光学性质。氟化PI膜显示出光滑的表面拓扑和表面能值,适合于其在底栅有机晶体管中使用。随着6FDA-6FDAM-PI和6FDA-TFMB-PI分别制造的有机晶体管,因为栅极绝缘体在各种测试条件下表现出优异的装置性能和电稳定性,特别是对于基于五偶联的装置。具有氟化PI的器件的优异性能归因于有机半导体的增强微观结构和下面的栅极绝缘体的富含氟的特性。此外,使用这些装置证明了包括NOT,NOR和NAND的基本逻辑栅极的有机互补电路。

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