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A novel yellow-green emitting phosphor with hafnium silicon multiple rings structure for light-emitting diodes and field emission displays

机译:具有铪硅的新型黄绿色发光磷光体,用于发光二极管的多环结构和场发射显示器

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摘要

A novel yellow-green emitting phosphor Na2HfSiO5:Eu2+ is successfully synthesized through solid-state reaction for the first time. Under the 369 nm excitation, the Na2HfSiO5:Eu2+ phosphors exhibit a broad yellow emission peaking at 551 nm with FWHM about 100 nm. The Na2HfSiO5:Eu2+ phosphors exhibit the asymmetric emission peaks owing to the Eu2+ partial occupation of four different Na+ sites with different environment. The energy transfer between Eu2+ ions appears by dipole-dipole interaction. A WLED lamp with high Ra (90) and low CCT (3875 K) was obtained by combing Na2HfSiO5:Eu2+ with BaMgAl10O17:Eu2+ (BAM), CaAlSiN3:Eu2+ and n-UV chip (lambda(max) = 380 nm). Under the low voltage and current conditions, the phosphor exhibits perfect stability and excellent anti degradation performance. All these results suggest that Na2HfSiO5:Eu2+ phosphor would be a potential candidate for n-UV LED and FED applications.
机译:一种新的黄绿色发光磷光体Na 2 HFSIO5:Eu2 +首次通过固态反应成功地合成。 在369nm励磁下,Na 2 HFSiO5:Eu2 +磷光体在551nm处表现出宽的黄色发射峰,其Fwwmm约为100nm。 Na2HFSIO5:Eu2 +荧光体表现出不对称的发射峰,由于EU2 +部分占用四种不同Na +位点的不同环境。 偶极偶极相互作用出现EU2 +离子之间的能量转移。 用Bamgal10O17:Eu2 +(Bam),CaAlsin3:Eu2 +和N-UV芯片(Lambda(Max)= 380nm),获得具有高RA(90)和低CCT(3875 k)的WLED灯(3875 k)。 在低电压和电流条件下,磷光体表现出完美的稳定性和优异的抗性降解性能。 所有这些结果表明NA2HFSIO5:EU2 +磷光体是N-UV LED和供给应用的潜在候选者。

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