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MOCVD-derived GdYBCO tapes with smooth surface and low R-s based on a new self-heating technology

机译:MOCVD衍生的GDYBCO带有光滑的表面和低R-S基于新的自热技术

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摘要

The metal organic chemical vapor deposition (MOCVD) method was used to prepare GdYBCO films on LaMnO3/homo epitaxial-MgO/ ion-beam-assisted-deposition-MgO/ solution-deposition-planarization-Y2O3 buffered Hastelloy tapes. By adopting a simple self-heating technique, the substrates were heated by the joule effect after applying a heating current (I-h) through Hastelloy metal tapes. The effects of substrate temperature and (Gd, Y)/Ba ratio (r(c)) in the precursor on the biaxial texture, surface morphology and superconducting performance of GdYBCO films were systematically investigated by varying the values of In and r,. Needle-like outgrowths formed on the substrate surface were characterized using a scanning electron microscope, energy dispersive spectrometer and X-ray diffraction system. The results show that a high I-h or r(c) leads to the formation of needle-like outgrowths. Therefore, I-h and r(c) are crucial process parameters that control the growth of needle-like outgrowths on the surface of GdYBCO films. Three hundred nanometer thick GdYBCO films were prepared at different I-h and r(c) by the MOCVD process. At an I-h of 27.0 A and an r(c) of 0.6, the surface of the GdYBCO film was very smooth and dense, which can provide a good template for multiple depositions of GdYBCO films. The critical current density of the deposited 300 nm-thick GdYBCO film was 4.4 MA/cm(2) (77 K, 0 T), which is attributed to good biaxial texture and appropriate film composition. Furthermore, the microwave surface resistance (77 K, 10 GHz) of the GdYBCO film was merely 0.581 m Omega.
机译:金属有机化学气相沉积(MOCVD)方法用于在兰诺3 / HOMO外延 - MgO /离子束辅助沉积-MgO /溶液沉积 - 平坦化-Y2O3缓冲哈氏合金带上制备GDYBCO薄膜。通过采用简单的自加热技术,通过Hastelloy金属胶带施加加热电流(I-H)后,通过焦​​耳效果加热基板。通过改变和R的值,系统地研究了衬底温度和(Gd,Y)/ Ba比(R(c))在前体中的底谱,表面形貌和超导性能的影响。使用扫描电子显微镜,能量分散光谱仪和X射线衍射系统表征形成在基板表面上的针状过度。结果表明,高I-H或R(C)导致形成针状过剩。因此,I-H和R(c)是控制GDYBCO薄膜表面上针状产物的生长的重要过程参数。通过MOCVD方法在不同I-H和R(C)的不同I-H和R(C)上制备三百纳米厚的GDYBCO薄膜。在27.0a的I-h和0.6的R(c),GDYBCO薄膜的表面非常光滑和致密,这可以为GDYBCO薄膜多次沉积提供良好的模板。沉积的300nm厚的GDYBCO膜的临界电流密度为4.4mA / cm(2)(77k,0 t),其归因于良好的双轴质地和适当的薄膜组合物。此外,GDYBCO薄膜的微波表面电阻(77k,10GHz)仅为0.581mΩ孔。

著录项

  • 来源
    《CERAMICS INTERNATIONAL》 |2018年第11期|共7页
  • 作者单位

    Univ Elect Sci &

    Technol China State Key Lab Elect Thin Films &

    Integrated Devic Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China State Key Lab Elect Thin Films &

    Integrated Devic Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China State Key Lab Elect Thin Films &

    Integrated Devic Chengdu 610054 Sichuan Peoples R China;

    Chengdu Fine Opt Engn Res Ctr Chengdu 610041 Sichuan Peoples R China;

    Southwest Jiaotong Univ Sch Phys Sci &

    Technol Chengdu 610031 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China State Key Lab Elect Thin Films &

    Integrated Devic Chengdu 610054 Sichuan Peoples R China;

    Shanghai Univ Sch Phys Shanghai 200444 Peoples R China;

    Shanghai Univ Sch Phys Shanghai 200444 Peoples R China;

    Univ Elect Sci &

    Technol China State Key Lab Elect Thin Films &

    Integrated Devic Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China State Key Lab Elect Thin Films &

    Integrated Devic Chengdu 610054 Sichuan Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 陶瓷工业;硅酸盐工业;
  • 关键词

    Smooth surface; Self-heating; GdYBCO; MOCVD; Critical current density; Microwave surface resistance;

    机译:表面光滑;自加热;GDYBCO;MOCVD;临界电流密度;微波表面电阻;

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