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Interfacial origin of enhanced energy density in SrTiO 3-based nanocomposite films

机译:SRTIO中增强能量密度的界面起源 3 基于纳米复合膜

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AbstractSrTiO3-based films doped with different Al-precursors were prepared by sol-gel methods and the dielectric strengths and leakage currents of the materials were investigated. The best performance was found in SrTiO3films doped with Al2O3nanoparticles (nano-Al2O3). When 5mol% of nano-Al2O3was added to SrTiO3films with Al electrodes, the dielectric strength was enhanced to 506.9MV/m compared with a value of 233.5MV/m for SrTiO3films. The energy density of the 5mol% nano-Al2O3doped SrTiO3films was 19.3J/cm3, which was also far higher than that of the SrTiO3films (3.2J/cm3). These results were attributed to interfacial anodic oxidation reactions, which were experimentally confirmed by cross-sectional transmission electron microscope studies and theoretically modelled based on Faraday's laws. The films with added nano-Al2O3featured many conducting paths at the interfaces between the host phase and the guest nano-Al2O3, which promoted ion transport and contributed to the strong anodic oxidation reaction capability of the 5mol% nano-Al2O3doped SrTiO3films.]]>
机译:<![cdata [ 抽象 SRTIO 3 掺杂有不同的AL-前体的薄膜研究了溶胶 - 凝胶方法和材料的介电强度和漏电流。在SRTIO 3 掺杂有AL 2 O 3 纳米粒子(NANO-AL 2 O 3 )。当5mol%的Nano-Al 2 O 3 被添加到SRTIO 3 用AL电极膜,介电强度增强至506.9mV / m,与SRTIO 3 电影。 5mol%nano-al 2 o 3 掺杂srtio 3 电影为19.3J / cm 3 ,它也远远高于srtio 3 电影(3.2J / cm 3 )。这些结果归因于界面阳极氧化反应,其通过横截面透射电子显微镜研究实验证实和基于法拉第法律的理论建模。添加Nano-Al 2 O 3 在界面之间的许多导线主机阶段和访客纳米Al 2 o 3 ,促进离子运输和有助于5mol%Nano-Al 2 O 3 的强阳极氧化反应能力掺杂srtio 3 薄膜。 ]]>

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