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MgTiO3/TiO2/MgTiO3: An ultrahigh-Q and temperature-stable microwave dielectric ceramic through cofired trilayer architecture

机译:Mgtio3 / TiO2 / Mgtio3:超高Q和温度稳定的微波介质陶瓷通过COFired Trilayer架构

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摘要

A cofired trilayer ceramic architecture showing as MgTiO3/TiO2/MgTiO3 was designed to realize temperature stable and ultrahigh-Q microwave dielectrics in the typical MgTiO3-TiO2 system. The effects of TiO2 content on the microwave dielectric properties of cofired trilayer ceramics were studied. Through the design of cofired trilayer architecture, the chemical reactions between MgTiO3 and TiO2 were limited within a narrow region of MgTiO3/TiO2 interfaces (similar to 15 pm in width), which could be beneficial for optimizing the microwave dielectric properties. Excellent characteristics of epsilon(r) similar to 18.38, Q x f value similar to 169,900 GHz and tau(f) similar to -1 ppm/degrees C were gained for the MgTiO3/TiO2/MgTiO3 ceramic architectures stacked with 1.63 vol% TiO2. The current work could serve as new strategies to develop high-performance dielectric resonators and multilayers for 5G wireless communication applications.
机译:设计为MgTiO3 / TiO2 / MGTIO3的Cofired Trider陶瓷结构设计,以实现典型的Mgtio3-TiO2系统中的温度稳定和超高Q微波电介质。 研究了TiO2含量对COFIRD三层陶瓷微波介电性能的影响。 通过设计COFired Trilayer架构,MgTiO3和TiO2之间的化学反应在MgTiO3 / TiO2接口的窄区域内限制(类似于15μm的宽度),这可能是优化微波介电性质的有益。 ε(R)的优异特性与类似于-1ppm /℃的169,900gHz和Tau(F)类似于与-1ppm /℃的169,900GHz和tiO2 / mgtio3陶瓷架构获得的epsilon(r)的特征类似于堆叠的1.63体积%TiO2。 目前的工作可以作为开发高性能介质谐振器和多层的用于5G无线通信应用的新策略。

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