CdS quantum dots sensitized ZnO spheres via ZnS overlayer to improve efficiency for quantum dots sensitized solar cells

摘要

This paper reports the preparation of three-dimensional ZnO spheres by using a hydrothcrmal method and their application to quantum dots sensitized solar cells (QDSSCs). After achieving the desired thickness of sensitized CdS quantum dots (QDs) for ZnO spheres, ZnS overlayer was deposited on the surface of CdS/ZnO photo-anodes to further improve the photoelectric properties. CdS QDs and ZnS overlayer were deposited by successive ionic layer adsorption and reaction (SILAR) method. The surface morphology and crystal structure of the samples were verified by field-emission scanning electron microscopy (FE-SEM), Transmission electron microscopy (TEM) and X-ray diffraction (XRD). The CdS QDs sensitized solar cells were ameliorated via using ZnS as a protection-layer between quantum dots and electrolyte. As a result, the power conversion efficiency (η) has been increased from 0.60 to 1.43% after being treated by ZnS overlayer for CdS/ZnO photo-anodes.