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Novel nanoarchitectured cobalt-doped TiO2 and carbon nanotube arrays: Synthesis and photocurrent performance

机译:新型纳米建筑钴掺杂TiO2和碳纳米管阵列:合成和光电流性能

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摘要

Nanostructured TiO2/CNT (carbon nanotube) hybrids have been lately the focus of extensive research for their application in electroactive devices. A variety of structural combinations of TiO2 and CNT has been reported, but most of them employ TiO2 nanoparticles over the carbon nanotubes. One-dimensional nanomaterials, such as nanotubes, usually possess enhanced properties when compared to nanoparticles, like improved electron mobility. This work presents a novel synthesis process of nanoarchitectures of CNTs intimately connected to cobalt doped TiO2 nanotubes. The Co-TiO2 nanotubes were obtained by anodization and employed as a substrate for CNT synthesis by chemical vapor deposition (CVD). CVD was performed in a range of temperatures between 650 degrees C and 850 degrees C. The synthesized nanostructures were characterized via X-ray diffraction, Raman spectroscopy, scanning, and transmission electron microscopy. The generated photocurrent density of the nanoarchitectures was measured by linear voltammetry. The sample synthesized at 750 degrees C exhibited well-formed Co-TiO2/CNT arrays; it further showed superior photocurrent performance. The results indicate that TiO2/CNT nanoarchitectures are promising candidates for application as photoactive materials.
机译:纳米结构TiO2 / CNT(碳纳米管)杂种最近是广泛研究它们在电活性器件中的应用的重点。已经报道了各种TiO2和CNT的结构组合,但大多数在碳纳米管上使用TiO2纳米颗粒。与纳米颗粒相比,纳米管等一维纳米材料通常具有增强的性能,如改善的电子迁移率。该工作介绍了与掺杂TiO2纳米管密切连接的CNT的CNT纳米建筑结构的新型合成过程。通过阳极氧化获得Co-TiO2纳米管,并用作通过化学气相沉积(CVD)的CNT合成的底物。 CVD在650℃和850℃之间的温度范围内进行。通过X射线衍射,拉曼光谱,扫描和透射电子显微镜表征合成的纳米结构。通过线性伏安法测量纳米建筑的产生的光电流密度。在750℃合成的样品表现出良好成形的CO-TiO2 / CNT阵列;它进一步显示出优异的光电流性能。结果表明,TiO2 / CNT纳米建筑是希望应用作为光活性材料的候选物。

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