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首页> 外文期刊>CERAMICS INTERNATIONAL >Controlled growth of alpha-MoO3 nanostructures with enhanced optical and electrochemical properties without capping agents
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Controlled growth of alpha-MoO3 nanostructures with enhanced optical and electrochemical properties without capping agents

机译:使用增强的光学和电化学性能控制α-MOO3纳米结构的生长而不具有封端剂

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摘要

Size and shape controlled crystalline alpha-MoO3 nanostructures were synthesized through modified hydrothermal method without using any capping agents. Variation of concentration of oxidizing agent (H2O2) governed the morphology of the resulted nanostructures. FESEM and TEM techniques confirmed the unique morphological pattern with uniform size distribution without any impurity. XRD data revealed the crystalline alpha-MoO3 nanocrystals having size of similar to 35-37 nm. alpha-MoO3 nanomaterial showed the diffusion controlled electrochemical response. The band gap energy was evaluated to be similar to 4.0 eV by UV-Vis absorption spectra. PL spectra showed the unique emission pattern due to polyvalent Mo cation and oxygen vacancies present in alpha-MoO3 nanocrystals. Analysis of Nyquist plot and Cyclic Voltagrams revealed the lower resistivity and enhanced capacitance values of synthesized materials. Synthesized alpha-MoO3 nanocrystals may have potential applications in energy storage devices and optoelectronic devices due to their good structural, optical and enhanced electrochemical properties.
机译:通过改性水热法合成尺寸和形状控制的结晶α-Moo3纳米结构,而不使用任何封端剂。氧化剂浓度的变化(H 2 O 2)控制了所得纳米结构的形态。 FeSEM和TEM技术证实了具有均匀尺寸分布的独特形态图案,而无需任何杂质。 XRD数据显示,具有与35-37nm相似的尺寸的结晶α-Moo3纳米晶体。 Alpha-Moo3纳米材料显示扩散控制的电化学反应。通过UV-Vis吸收光谱评价带隙能量以类似于4.0eV。由于α-MOO3纳米晶体中存在的多价MO阳离子和氧空位,因此PL光谱显示出独特的发射模式。奈奎斯特图和循环VOLTAGRAM的分析显示了合成材料的较低电阻率和增强电容值。由于它们的良好结构,光学和增强的电化学性能,合成的α-Moo3纳米晶体可以具有蓄能器件和光电器件中的潜在应用。

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