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Embedded capacitor multiplier gain boosting compensation for large-capacitive-load three-stage amplifier with slew rate enhancement

机译:具有压摆率增强功能的大电容负载三级放大器的嵌入式电容器倍增器增益提升补偿

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摘要

An embedded capacitor multiplier gain boosting compensation (ECMGBC) technique with slew rate enhancement circuit is presented in this paper for a three-stage amplifier. The ECMGBC technique pushes the non-dominant complex poles of the amplifier to high frequencies for gain-bandwidth product (GBW) extension under low quiescent current. In addition, the proposed slew rate enhancement circuit improves the transient responses of ECMGBC amplifier without any problem of oscillation. The ECMGBC amplifier has been designed and simulated in a 0.35-μm mixed signal CMOS process. From the post-simulation results, the amplifier driving a 1,000-pF capacitance achieves a 1-MHz GBW with a phase margin of 60° by consuming 13.5-μA quiescent current. The total compensation capacitance is only 1.2 pF. The transient responses are simulated when the amplifier is in unity-gain non-inverting configuration with a 0.6-V step input at a 2-V supply. The 1% settling time is 1.1 μs for a 1,000-pF load capacitance. Compared with previously reported works, the ECMGBC amplifier achieves good figures of merit. Moreover, the ECMGBC amplifier obtains a very high ratio of load capacitance to total compensation capacitance.
机译:本文针对三级放大器,提出了一种具有压摆率增强电路的嵌入式电容器倍增增益补偿(ECMGBC)技术。 ECMGBC技术将放大器的非主要复数极点推至高频,以便在低静态电流下扩展增益带宽乘积(GBW)。另外,所提出的压摆率增强电路改善了ECMGBC放大器的瞬态响应,而没有任何振荡问题。 ECMGBC放大器是在0.35μm混合信号CMOS工艺中设计和仿真的。从仿真后的结果来看,驱动1,000pF电容的放大器通过消耗13.5μA的静态电流来实现1-MHz GBW,相位裕量为60°。总补偿电容仅为1.2 pF。当放大器处于单位增益同相配置且在2V电源上具有0.6V步进输入时,将仿真瞬态响应。对于1,000 pF的负载电容,1%的建立时间为1.1μs。与以前报道的作品相比,ECMGBC放大器具有良好的品质因数。此外,ECMGBC放大器获得很高的负载电容与总补偿电容之比。

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