Single Event Effects of Semiconductor Devices at the Ground

摘要

Single event effects of semiconductor devices at the ground due to high-energy terrestrial neutrons are emerging as a serious concern for reliability of electronic applications as scaling nosedives below sub quarter-microns. Our experimental and theoretical approaches and achievements in clarifying underlying mechanisms and quantification of current and future trends are summarized. Particular attention was paid on the consistency of wide variation of experimental and/or simulation methods and multi-cell upset of SRAM devices of sub-quarter micron minimum feature size.