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首页> 外文期刊>ACS applied materials & interfaces >Stable Core/Shell CdTe/Mn-CdS Quantum Dots Sensitized Three-Dimensional, Macroporous ZnO Nanosheet Photoelectrode and Their Photoelectrochemical Properties
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Stable Core/Shell CdTe/Mn-CdS Quantum Dots Sensitized Three-Dimensional, Macroporous ZnO Nanosheet Photoelectrode and Their Photoelectrochemical Properties

机译:稳定的核/壳CdTe / Mn-CdS量子点敏化的三维大孔ZnO纳米片光电电极及其光电化学性能

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摘要

A novel photoelectrode based on ZnS/CdTe/Mn-CdS/ZnS-sensitized three-dimensional macroporous ZnO nanosheet (NS) has been prepared by electrodeposition and successive ion layer adsorption and reaction (SILAR) method. The photoelectrode performances were significantly improved through the coupling of the core/shell CdTe/Mn-CdS quantum dots (QDs) with ZnO NS, and the introduction of the ZnS layer as a potential barrier. The photocurrent density systematically increases from ZnO NS (0.45 mA/cm~2), CdTe/Mn-CdS/ZnO NS (4.98 mA/cm2), to ZnS/CdTe/Mn-CdS/ZnS/ZnO (6.23 mA/cm2) under the irradiation of AM 1.5G simulated sunlight. More important, the ZnS/CdTe/Mn-CdS/ZnS-sensitized ZnO NS photoelectrode provides a remarkable photoelectrochemical cell efficiency of 4.20% at -0.39 V vs Ag/AgCl.
机译:通过电沉积和连续离子层吸附反应(SILAR)方法制备了一种新型的基于ZnS / CdTe / Mn-CdS / ZnS敏化的三维大孔ZnO纳米片(NS)的光电极。通过将核/壳CdTe / Mn-CdS量子点(QDs)与ZnO NS耦合,以及引入ZnS层作为势垒,可以显着提高光电极性能。光电流密度从ZnO NS(0.45 mA / cm〜2),CdTe / Mn-CdS / ZnO NS(4.98 mA / cm2)有系统地增加到ZnS / CdTe / Mn-CdS / ZnS / ZnO(6.23 mA / cm2)在AM 1.5G模拟阳光下照射。更重要的是,ZnS / CdTe / Mn-CdS / ZnS敏化的ZnO NS光电极在-0.39 V电压下相对于Ag / AgCl提供了4.20%的显着光电化学电池效率。

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