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首页> 外文期刊>ACS applied materials & interfaces >Antiferroelectric Thin-Film Capacitors with High Energy-Storage Densities, Low Energy Losses, and Fast Discharge Times
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Antiferroelectric Thin-Film Capacitors with High Energy-Storage Densities, Low Energy Losses, and Fast Discharge Times

机译:具有高储能密度,低能量损耗和快速放电时间的反铁电薄膜电容器

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摘要

We demonstrate a capacitor with high energy densities, low energy losses, fast discharge times, and high temperature stabilities, based on Pb0.97Y0.02[(Zr0.6Sn0.4)(0.925)Ti-0.075]O-3 (PYZST) antiferroelectric thin-films. PYZST thin-films exhibited a high recoverable energy density of U-reco = 21.0 J/cm(3) with a high energy-storage efficiency of eta = 91.9% under an electric field of 1300 kV/cm, providing faster microsecond discharge times than those of commercial polypropylene capacitors. Moreover, PYZST thin-films exhibited high temperature stabilities with regard to their energy-storage properties over temperatures ranging from room temperature to 100 degrees C and also exhibited strong charge discharge fatigue endurance up to 1 x 10(7) cycles.
机译:我们基于Pb0.97Y0.02 [(Zr0.6Sn0.4)(0.925)Ti-0.075] O-3(PYZST)展示了一种具有高能量密度,低能量损耗,快速放电时间和高温稳定性的电容器反铁电薄膜。 PYZST薄膜在1300 kV / cm的电场下表现出高的U-reco = 21.0 J / cm(3)的可恢复能量密度和eta = 91.9%的高储能效率,比商业聚丙烯电容器。此外,PYZST薄膜在从室温到100摄氏度的温度范围内,其储能性能表现出高温稳定性,并且还具有高达1 x 10(7)个循环的强电荷放电疲劳强度。

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