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Electrodeposition of Antimony Selenide Thin Films and Application in Semiconductor Sensitized Solar Cells

机译:硒化锑薄膜的电沉积及其在半导体敏化太阳能电池中的应用

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摘要

Sb2Se3 thin films are proposed as an alternative light harvester for semiconductor sensitized solar cells. An innovative electrodeposition route, based on aqueous alkaline electrolytes, is presented to obtain amorphous Sb2Se3. The amorphous to crystalline phase transition takes place during a soft thermal annealing in Ar atmosphere. The potential of the Sb2Se3 electrodeposited thin films in semiconductor sensitized solar cells is evaluated by preparing TiO2/Sb2Se3/CuSCN planar heterojunction solar cells. The resulting devices generate electricity from the visible and NIR photons, exhibiting the external quantum efficiency onset close to 1050 nm. Although planar architecture is not optimized in terms of charge carrier collection, photocurrent as high as 18 mA/cm~2, under simulated (AM1.5G) solar light, is achieved. Furthermore, the effect of the Sb2Se3 thickness and microstructural properties on the photocurrent is analyzed, suggesting the hole transport is the main limiting mechanism. The present findings provide significant insights to design efficient semiconductor sensitized solar cells based on advanced architectures (e.g., nanostructured and tandem), opening wide possibilities for progresses in this emerging photovoltaics technology.
机译:提出了Sb2Se3薄膜作为半导体敏化太阳能电池的另一种光收集器。提出了一种基于水性碱性电解质的创新电沉积路线,以获得无定形Sb2Se3。在Ar气氛中进行软热退火期间,发生了非晶态到结晶态的相变。通过制备TiO2 / Sb2Se3 / CuSCN平面异质结太阳能电池,评估了半导体敏化太阳能电池中Sb2Se3电沉积薄膜的电势。产生的器件从可见光和NIR光子产生电,展现出接近1050 nm的外部量子效率。尽管没有在电荷载流子收集方面优化平面架构,但在模拟(AM1.5G)太阳光下仍可获得高达18 mA / cm〜2的光电流。此外,分析了Sb2Se3厚度和微结构性质对光电流的影响,表明空穴传输是主要的限制机制。本发现为基于先进的结构(例如,纳米结构和串联)设计有效的半导体敏化太阳能电池提供了重要的见识,为这种新兴的光伏技术的发展提供了广阔的可能性。

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