A new recessed gate-line employing air-gap gate-data line inter-crossover to reduce signal delay for AMLCD

摘要

A new gate-to-data line inter-crossover employing the recessed gate-line and the data line floated on air at the point of the line inter-crossover has been proposed in order to reduce the line-crossover capacitance for AMLCD panel. Experimental results show that the signal delay is reduced considerably because the proposed structure is composed of a low-dielectric air-gap between gate and data line inter-crossover while the conventional one employs an oxide as a dielectric material. The proposed structure fabricated in the oxide trench is planarized in the TFT panel in order to improve the mechanical property of the structure without sacrificing the capacitance and more photolithography masks. The proposed structure is considerably durable under the mechanical stress such as rubbing or spacer processes. The signal delay of new panel structure for AMLCD is decreased by about 6 times compared with that of the conventional panel.