強磁性半導体における磁壁の電流駆動

摘要

Domain wall motion induced by current in (Ga, Mn)-As, ferromagnetic semiconductor, with perpendicular magnetic anisotropy has been investigated. The spintransfer effect is confirmed as the dominant mechanism for the observed motion. We also measured and compared such motion in the thermally activated subthreshold,or "creep" regime, where velocity obeys an Arrhenius scaling law.