首页> 外文期刊>Journal of the European Ceramic Society >Structural, chemical and dielectric properties of ceramic injection moulded Ba(Zn_(1/3)Ta_(2/3))O_3 microwave dielectric ceramics
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Structural, chemical and dielectric properties of ceramic injection moulded Ba(Zn_(1/3)Ta_(2/3))O_3 microwave dielectric ceramics

机译:陶瓷注塑BA的结构,化学和介电性能(Zn_(1/3)Ta_(2/3))O_3微波介质陶瓷

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摘要

We report the development of a ceramic injection moulding (CIM) process to produce complex-shaped structures using high-performance microwave ceramic materials. In particular, we describe the synthesis methods and the structural, chemical and dielectric properties of Ba(Zn_(1/3)Ta_(2/3))O_3 (BZT) doped with Ni and Zr ceramics produced using ceramic injection moulding. Sintering the ceramic injection moulded Ba(Zn_(1/3)Ta_(2/3))O_3 to a relative density of approx 94 percent was possible at a temperature of 1680 deg C and a time of 48 h. The best samples to date exhibit a dielectric constant, epsilon _r, of approx30, a Q value, of approx 31,250 (i.e. tan delta < 3.2 X 10~(-5)) at 2 GHz, and a temperature coefficient of resonance frequency, tau _f, of 0.1 ppm/deg C.
机译:我们报道了陶瓷注射成型(CIM)工艺的开发,以生产使用高性能微波陶瓷材料产生复杂的结构。 特别地,我们描述了使用陶瓷注射成型产生的Ni和Zr陶瓷的Ba(Zn_(1/3)Ta_(2/3))O_3(BZT)的合成方法和结构,化学和介电性能。 在1680℃的温度和48小时的时间,烧结陶瓷注射模塑的BA(Zn_(1/3)Ta_(2/3)Ta_(2/3))O_3至相对密度为约94%。 迄今为止的最佳样本具有大约30,Q值的介电常数,epsilon _r,大约31,250(即Tan delta <3.2×10〜(-5)),在2GHz,谐振频率温度系数,Tau _f,0.1 ppm / deg c.

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