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首页> 外文期刊>Journal of instrumentation: an IOP and SISSA journal >Development of a double-sided silicon strip detector for HIRFL-CSR experiments
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Development of a double-sided silicon strip detector for HIRFL-CSR experiments

机译:用于HIRFL-CSR实验的双面硅条探测器的开发

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摘要

To provide good performance of spatial and energy measurement for the experiments at the HIRFL-CSR, a double-sided silicon strip detector (DSSD) has been designed as the pixel detector. Performance of the DSSD has been characterized in a vacuum chamber with the alpha source. The reverse leakage current of the DSSD is measured to be ~ 3 nA/cm~2 ? 100 μm at the full depleted voltage and the energy resolution of each strip is better than 1%. Besides, the energy information of charge sharing events can be well measured. In this paper, the design, manufacture and performance characterization of the DSSD will be discussed.
机译:为了为HIRFL-CSR的实验提供良好的空间和能量测量,双面硅条检测器(DSSD)设计为像素检测器。 DSSD的性能已经在具有α源的真空室中的特征。 测量DSSD的反向漏电流为〜3 na / cm〜2? 在全耗尽电压下100μm,每个条带的能量分辨率优于1%。 此外,电荷共享事件的能量信息可以衡量。 在本文中,将讨论DSSD的设计,制造和性能表征。

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