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Research on the Electro-explosive Behaviors and the Ignition Performances of Energetic Igniters

机译:电力爆炸行为的研究与精力点火器的点火性能

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摘要

This article describes the electro-explosive behaviors and the ignition performances of energetic igniters based on the combination of polysilicon film with Al/CuO nanoenergetic multilayer films (nEMFs). The ultra-high-speed framing camera images show that melting first occurs at the V-type angles and then expands to the entire bridge. The Al/CuO nEMF is heated and fired from below, forced to form lots of flyers with different sizes, ejected with the expansion of polysilicon plasma, and reacts exothermically to release a large quantity of energy. Furthermore, temperature diagnosis results demonstrate higher temperature products of energetic igniters. Ignition experiment at a standoff of 1.5 mm results show that the average firing voltage and the variance of energetic igniters are 28.50 V and 0.96, whereas those of polysilicon igniters are 32.05 V and 1.94.
机译:本文介绍了基于多晶硅膜与Al / CuO纳米植物多层膜(NEMF)的多晶硅膜的组合的电爆炸行为和精力点火器的点火性能。 超高速框架相机图像显示熔化首先发生在V型角度,然后膨胀到整个桥梁。 Al / Cuo NEMF从下面加热并射出,被迫形成具有不同尺寸的大量传单,随着多晶硅等离子体的膨胀而弹出,并对释放大量的能量反应。 此外,温度诊断结果表明了高度温度点燃的高温产品。 点火试验在1.5毫米的结果中,结果表明,平均烧制电压和精力点火器的方差为28.50 V和0.96,而多晶硅点火器的速度为32.05 V和1.94。

著录项

  • 来源
    《Journal of Energetic Materials》 |2018年第4期|共12页
  • 作者单位

    Nanjing Univ Sci &

    Technol Sch Chem Engn 200 Xiaolingwei St Nanjing 210094 Jiangsu Peoples R China;

    Nanjing Univ Sci &

    Technol Sch Chem Engn 200 Xiaolingwei St Nanjing 210094 Jiangsu Peoples R China;

    Nanjing Univ Sci &

    Technol Sch Chem Engn 200 Xiaolingwei St Nanjing 210094 Jiangsu Peoples R China;

    Nanjing Univ Sci &

    Technol Sch Chem Engn 200 Xiaolingwei St Nanjing 210094 Jiangsu Peoples R China;

    Nanjing Univ Sci &

    Technol Sch Chem Engn 200 Xiaolingwei St Nanjing 210094 Jiangsu Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 能源与节能;
  • 关键词

    Electro-explosive device; nano-energetic multilayers films; semiconductor bridge;

    机译:电爆装置;纳米能量多层薄膜;半导体桥;

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