Measurement Method for the Dynamic On-State Resistance of GaN Semiconductors

摘要

Defects in material structure effects the ON-state resistance of GaN devices, which can't be considered constant in power loss evaluation when considering high operating frequency. The aim of this article is to propose a novel method to measure the dynamic RDSon. The method resolves a typical disadvantage of former methods e.g. an unclear clamping diode voltage drop in former approaches. Test results obtained with the new method are presented for 3 samples provided by different suppliers. Results shows that each sample exhibits a different dynamic RDSon characteristics what indicates a different process technology used to manufacture the device.