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Optimisation of the CZTSe thin film composition obtained by a sequential electrodeposition process

机译:通过顺序电沉积过程获得的CZTSE薄膜组合物的优化

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摘要

The influence of the elemental composition of CuZnSn coatings deposited by electrodeposition on the formation of the Cu2ZnSnSe4 crystal structure following a selenisation process was investigated using X-ray diffraction, scanning electron microscopy and Raman spectroscopy. This study showed that the optimum alloy ratio to achieve the Cu2ZnSnSe4 crystal without impurity phases was in the range of 0.37-0.50 for Cu/(Zn+Sn) and 2.5-4 for Zn/Sn.
机译:使用X射线衍射,扫描电子显微镜和拉曼光谱研究了通过电沉积在硒化过程后沉积的Cuznsn涂层的元素组成的影响。 该研究表明,在没有杂质相的情况下实现Cu2ZNSNSE4晶体的最佳合金比为0.37-0.50的Cu /(Zn + Sn)和2.5-4,用于Zn / Sn。

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