Post annealing treatment of zinc sulphide thin film as a buffer layer for solar cell application

摘要

In the present study, buffer layer of zinc sulphide (ZnS) thin film for solar cell has been deposited by chemical bath deposition method and followed by annealing at different temperatures in order to control the surface morphology and grain size of the thin film. Effect of annealing is also analysed by structural, morphological and optical properties. The X-ray diffraction analyses revealed that ZnS thin film is polycrystalline in nature with cubic crystal structure. The atomic force micrographs images indicated change in grain size which further confirmed by scanning electron microscopy analysis. Optical measurement data give band gap of 3.5 eV which is optimal band gap for buffer layer for solar cell application.