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首页> 外文期刊>The Physics of Metals and Metallography >Influence of asymmetric pinning of vortex domain walls on the magnetization curve of films with in-plane anisotropy
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Influence of asymmetric pinning of vortex domain walls on the magnetization curve of films with in-plane anisotropy

机译:涡旋畴壁对面内各向异性膜磁化曲线的影响

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摘要

A hysteresis loop shifted relative to the zero field in a fragment of a 100-nm-thick film with inplane anisotropy has been calculated based on a three-dimensional micromagnetic simulation. The reason for the revealed effect is an asymmetric pinning of a vortex domain wall by regions with enhanced values of the saturation magnetization and anisotropy constant.
机译:基于三维微磁性模拟,已经基于三维微磁模拟计算相对于100nm厚膜的片段中相对于100nm厚膜的片段中的滞后环。 揭示效果的原因是通过具有增强的饱和磁化和各向异性常数的区域的区域的涡旋结构域壁的不对称钉扎。

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