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The penetration and concentration of solvated electrons and hydroxyl radicals at a plasma-liquid interface

机译:等离子体液界面在溶剂化电子和羟基自由基的渗透和浓缩

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摘要

In this work, we present an analytic model for the interfacial behavior of hydroxyl radicals (OHaq) and solvated electrons (e-aq) delivered into an aqueous solution by an atmospheric pressure low-temperature plasma. The model yields simple scaling laws for the interfacial concentration and average penetration depth into the solution in terms of a few key operational parameters. Notably, the interfacial flux of free radicals is shown to be a key parameter, and the penetration of radicals into solution is shown to decrease as the radical flux increases. Additionally, the model sets upper limits for the average penetration on the order of 100 nm and interfacial concentration on the order of 1 mM (1017 cm?3).
机译:在这项工作中,我们介绍了通过大气压低温等离子体递送到水溶液中的羟基自由基(OHAQ)和溶剂化电子(E-AQ)的分析模型。 该模型在少数关键操作参数方面,为界面浓度和平均渗透深度产生简单的缩放规律。 值得注意的是,自由基的界面通量显示为关键参数,并且随着自由基磁通量增加,自由基进入溶液中的渗透率降低。 另外,该模型将大约100nm的平均渗透率的上限设置为100nm的平均渗透率,而界面浓度为1mm(1017cm≤3)。

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