Mechanism of Electrical Conductivity and Thermal Conductivity in AgSbSe2

摘要

Research was done on electrical conductivity and thermal conductivity of AgSbSe2 in the temperature range of 80-330 K. It was demonstrated that charge transfer in AgSbSe2 is carried out by means of hopping conductivity of carriers over localized states. The localized state radius and densities of localized states at the Fermi level were calculated. It was demonstrated that high defectiveness of AgSbSe2 leads to the low value of lattice thermal conductivity.