Facile fabrication of phosphorus-doped g-C3N4 exhibiting enhanced visible light photocatalytic degradation performance toward textile dye

摘要

Phosphorus-doped graphitic carbon nitride (P-g-C3N4) was facilely fabricated by in situ thermal copolymerization of urea and triphenylphosphine source materials. The P-g-C3N4 exhibited an enhanced photocatalytic performance than pristine g-C3N4 counterpart for the degradation of rhodamine B and acid blue D-2BR textile dye under visible light irradiation. X-ray diffraction (XRD), transmission electron microscopy (TEM), N-2 adsorption-desorption isotherms, X-ray photoelectron spectra (XPS), and diffuse reflection spectroscopy (DRS) techniques were used to characterized the structure and property of P-g-C3N4 photocatalyst. The phosphorus doping enhanced visible light harvesting and surface area, but also substantially changed the electronic property of g-C3N4 material that could suppress the recombination of photogenerated charge carriers, and thus improved photocatalytic performance.