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Transport of Hot Charge Carriers in Si, GaAs, InGaAs, and GaN Submicrometer Semiconductor Structures with Nanometer-Scale Clusters of Radiation-Induced Defects

机译:用纳米级凝结诱导缺陷的纳米级簇中Si,GaAs,IngaAs和GaN潜模半导体结构的热电荷载体运输

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摘要

The distributions of the radii of subclusters of radiation-induced defects and of the distances between the cores of these subclusters are calculated for Si, GaAs, and GaN. The features of the transport of hot charge carriers in the above materials upon irradiation with neutrons are discussed. A burst in the velocity of electrons in Si, GaAs, InGaAs, and GaN before and after irradiation is calculated for the first time; also, the extent of manifestation of the above effect in different semiconductor materials is compared.
机译:针对Si,GaAs和GaN计算辐射诱导的缺陷的距离和这些子平整芯的核之间的距离的距离的分布。 讨论了在用中子照射时在上述材料中运输热电荷载流子的特征。 在Si,GaAs,IngaAs和GaN中的电子速度中突发在辐射之前和之后的电子中的速度是第一次计算的; 而且,比较了上述不同半导体材料的表现的程度。

著录项

  • 来源
    《Semiconductors》 |2017年第11期|共4页
  • 作者单位

    Lobachevsky State Univ Nizhny Novgorod Nizhnii Novgorod 603950 Russia;

    Lobachevsky State Univ Nizhny Novgorod Nizhnii Novgorod 603950 Russia;

    Lobachevsky State Univ Nizhny Novgorod Nizhnii Novgorod 603950 Russia;

    Lobachevsky State Univ Nizhny Novgorod Nizhnii Novgorod 603950 Russia;

    Lobachevsky State Univ Nizhny Novgorod Nizhnii Novgorod 603950 Russia;

    Lobachevsky State Univ Nizhny Novgorod Nizhnii Novgorod 603950 Russia;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体物理学;
  • 关键词

  • 入库时间 2022-08-20 05:35:10

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