3.1-10.6 GHz ultra-wideband LNA design using dual-resonant broadband matching technique

摘要

This paper presents an ultra-wideband low noise amplifier design using the dual-resonant broadband matching technique. The proposed LNA achieves a 10.2 dB gain with ±0.9 dB gain flatness over a frequency range of 3.1-10.6 GHz and a -3-dB bandwidth of 2.4-11.6 GHz. The measured noise figure ranges from 3.2 to 4.7 dB over 3.1-10.6 GHz. At 6.5 GHz, the measured IIP3 and input-referred P1dB are +6 dBm and -5 dBm, respectively. The proposed LNA occupies an active chip area of 0.56 mm~2 in a TSMC 0.18 μm RF-CMOS process and consumes 16 mW from a 1.8 V supply.