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A differential multi-band CMOS low noise amplifier with noise cancellation and interference rejection

机译:具有噪声消除和干扰抑制功能的差分多频带CMOS低噪声放大器

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摘要

In this paper, a differential multi-band CMOS low noise amplifier (LNA), operated in a wide range from 1350 to 2900MHz, with input matching device, noise cancellation and interference rejection technology, is proposed. Traditional wideband LNAs have poor performances on interference rejection or image rejection. In this design, a multi-band CMOS LNA with matching device noise cancelling, matching device current reuse and source inductance device reuse technologies is proposed, it can improve noise figure, wideband match and interference rejection. There exists a switch-mode notch filter to enhance the interference rejection performance and it does not need additional inductors. A prototype of proposed multi-band CMOS LNA was designed to work at 1450-1490MHz, 1680-1685MHz and 2635HMz-2660MHz. The simulation results show that the gain is between 18 and 19 dB at L-band application (1450-1685MHz) and between 25.8 and 26.1 dB at CMMB Satellite application (2635HMz-2660MHz), the noise figure is 3.1-3.3 dB, and the third-order intercept point (IIP3) is -7dBm. It consumes 27.35 mW under 1.8 V supply voltage in TSMC 0.18-μm RF CMOS process.
机译:本文提出了一种在1350MHz至2900MHz的宽范围内工作,具有输入匹配装置,噪声消除和干扰抑制技术的差分多频带CMOS低噪声放大器(LNA)。传统的宽带LNA在抗干扰或镜像抑制方面性能较差。在该设计中,提出了一种具有匹配器件噪声消除,匹配器件电流重用和源电感器件重用技术的多频带CMOS LNA,它可以改善噪声系数,宽带匹配和干扰抑制。存在一个开关模式陷波滤波器以增强抗干扰性能,并且不需要额外的电感器。拟议中的多频带CMOS LNA的原型设计为工作在1450-1490MHz,1680-1685MHz和2635HMz-2660MHz上。仿真结果表明,在L频段应用(1450-1685MHz)时,增益在18至19 dB之间;在CMMB卫星应用(2635HMz-2660MHz)中,增益在25.8至26.1 dB之间;噪声系数为3.1-3.3 dB,并且三阶交调点(IIP3)为-7dBm。在TSMC0.18-μmRF CMOS工艺中,在1.8 V电源电压下消耗27.35 mW。

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