Effect of Electron-Acceptor Compounds on the Laser Burning of Photoluminescence of Hybrid Si/SiO x Silicon Nanoparticles

摘要

The role of the environment on the dynamics of the photoburning processes of the red–infrared photoluminescence (PL) of hybrid silicon nanoparticles (npSi/SiO~( x )) under the influence of continuous laser radiation (410 and 635 nm) in different media (in a helium or oxygen atmosphere at low pressures, in carbon tetrachloride solutions, in polymer matrices, and in vacuum) is studied. It is established that the presence of electron-acceptor molecules or compounds in the components of the medium increases the rate of luminescence photoburning (photosensitivity) of npSi/SiO~( x ). The lowest photosensitivity is observed when the nanoparticles are in vacuum or in a helium atmosphere. It is shown that the photoburning rate depends on the wavelength of the exciting radiation. A mechanism of photosensitivity of npSi/SiO~( x )is proposed which is based on recharging the centers involved in the photoluminescence process and located in the oxide shell or at the core–shell interface.