Nanosized materials CeO2/SnO2 and CeO2/SnO2-Sb2O5 for adsorption semiconductor sensors to detect hydrogen in air

摘要

Nanosized materials based on SnO2 and SnO2 - Sb2O5 with different concentrations of added cerium were synthesized by a sol-gel method. Semiconductor gas sensors on the base of the materials were created and their characteristics (electrical resistance in air, response to hydrogen, dynamic properties) were studied. It is shown that cerium addition significantly improves the sensor response due to high catalytic activities of Ce-containing nanosized oxide materials in the H-2 oxidation reaction. SnO2-based sensors were found to demonstrate higher sensitivity to hydrogen than SnO2-Sb2O5 based sensors. Possible mechanism concerning formation of the sensitivity of the Ce-containing sensors to H-2 is proposed.