Design and performance analysis of double cantilever type capacitive shunt RF MEMS switch

摘要

This paper presents a novel structure of capacitance shunt type RF switch for 5G applications. The proposed RF MEMS switch is having Cantilever type designed with optimized dimensions to operate in V-band applications. The electromechanical analysis is done by using the COMSOL tool. The actuation voltage of the proposed switch is 10.5 V with the air gap of 1 mu m and gold as a beam material. The proposed switch with the meanders and perforations show the scattering parameters in HFSS software such as insertion loss (S-12) of - 0.033 dB and return loss (S-11) less than - 48 dB and the isolation (S-21) calculated in off-state as - 62 dB at 50 GHz.