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Preparation of hollow out-of-plane hafnium oxide microneedle arrays for transdermal drug delivery

机译:用于透皮药物递送的空心外氧化铪微针阵列的制备

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Due to the incapacity of many drugs to enter the skin at therapeutically useful rates, transdermal drug delivery with the advantages of controlled release, high safety and low degree of side effects is seriously hampered in efficiency and success. A microneedle approach can dramatically promote transdermal delivery, especially for macromolecules. In this paper, a fabrication process for hollow out-of-plane hafnium oxide microneedles on silicon wafer using only one mask has been developed. Photoresist is spun on a 4 '' silicon (100) wafer and patterned by a mask. Deep reactive ion etching is used to form deep molds inside the wafer. A hafnium oxide film is deposited by atomic layer deposition to cover the top side of the wafer and the inside walls of the molds. Then the back side of silicon wafer is etched under the condition of 30 wt% KOH solution and a water-bath temperature of 81 degrees C until exposed hollow hafnium oxide microneedles are obtained. Compared to the processes that have been developed for silicon, silicon oxide, or polymer microneedles, the process presented here is simpler, and the strength and flexibility of hollow hafnium oxide microneedles can be easily adjusted by modifying the depositing time of hafnium oxide films. Hafnium oxide microneedles have potential applications in transdermal drug delivery.
机译:由于许多药物在治疗有用的速率下进入皮肤,透皮药物递送具有控制释放的优点,高安全性和低副作用的效率和成功受到严重阻碍。微针方法可以显着促进透皮递送,特别是对于大分子。在本文中,已经开发出仅使用仅一种掩模的硅晶片上的中空外平面氧化铪微针的制造方法。光致抗蚀剂在4''硅(100)晶片上旋转并由掩模图案化。深反应离子蚀刻用于在晶片内部形成深模具。通过原子层沉积沉积氧化铪膜以覆盖晶片的顶侧和模具的内壁。然后在30wt%KOH溶液的条件下蚀刻硅晶片的背面,得到81℃的水浴温度直至暴露的中空氧化铪微针。与已经开发用于硅,氧化硅或聚合物微针的过程相比,这里呈现的方法更简单,并且通过改变氧化铪膜的沉积时间,可以容易地调节中空氧化铪微针的强度和柔韧性。氧化铪微针在透皮药物递送中具有潜在的应用。

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