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首页> 外文期刊>Crystal Research and Technology: Journal of Experimental and Industrial Crystallography >Characterization of thin-film a-Si:H/μc-Si:H tandem solar cells on glass substrates
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Characterization of thin-film a-Si:H/μc-Si:H tandem solar cells on glass substrates

机译:玻璃基板上的薄膜a-Si:H /μc-Si:H串联太阳能电池的表征

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摘要

Techniques, such as photoluminescence (PL) and electron-beam-induced current (EBIC), have already proven their effectiveness and applicability for solar materials. Although, the methods are standard techniques for multicrystalline Si PV, their application to thin films is challenging and requires special adjustment and a careful selection of the measuring parameters. Here we report on the investigation of thin-film tandem solar cells consisting of hydrogenated amorphous (a-Si:H) and microcrystalline silicon (μc-Si:H) on glass substrates. We observe a homogeneous spatial distribution of the PL signals caused by the dominance of the surface recombination. A typical PL spectrum exhibits sub-band gap features of a-Si:H. We relate the sub-band-gap spectral features mainly to transitions of carriers trapped in deep states. Observations on partially processed stacks support this supposition. PL is only detectable on the a-Si:H layer, while EBIC signal is generated mainly in the μc-Si:H layer. It is found out that the luminescence features of the thin a-Si:H layer resemble those on bulk a-Si:H.
机译:光致发光(PL)和电子束感应电流(EBIC)等技术已经证明了其在太阳能材料中的有效性和适用性。尽管这些方法是用于多晶Si PV的标准技术,但将它们应用于薄膜仍具有挑战性,需要进行特殊调整并仔细选择测量参数。在这里,我们报告了由玻璃基板上的氢化非晶硅(a-Si:H)和微晶硅(μc-Si:H)组成的薄膜串联太阳能电池的研究情况。我们观察到由表面重组的优势引起的PL信号的均匀空间分布。典型的PL光谱表现出a-Si:H的子带隙特征。我们将子带隙频谱特征主要与陷于深状态的载波的跃迁相关。对部分处理的堆栈的观察结果支持此假设。 PL仅可在a-Si:H层上检测到,而EBIC信号主要在μc-Si:H层中生成。已经发现,薄的a-Si:H层的发光特征类似于在块状a-Si:H上的发光特征。

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