Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy

摘要

In this paper the reliability of III-nitride blue laser diodes grown by plasma-assisted molecular beam epitaxy on low threading dislocation density Ammono-GaN substrates is studied. It is found that defects formed in the heavily Mg-doped electron blocking layer (EBL) strongly affect the lifetime of the devices. These defects are identified as basal stacking fault domains which create threading dislocations. The effect of the EBL growth conditions on their generation and influence on lifetime of devices is presented. By optimization of the growth conditions of the EBL the lifetime of III-nitride laser diodes has been increased from 2000 up to 100,000 h.