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Local probe oxidation of self-assembled monolayers on hydrogen-terminated silicon

机译:氢封端的硅上自组装单分子膜的局部探针氧化

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Local probe oxidation experiments by conductive AFM have been performed on a hexadecyl monolayer and a N-hydroxysuccinimide (NHS)-ester-functionalized undecyl (NHS-UA) monolayer assembled on hydrogen-terminated (i.e., unoxidized) silicon. The oxidation conditions for the mild oxidation of the top terminal groups of monolayers and the deep oxidation of the underlying silicon into silicon oxide were investigated. The results show that the bias threshold for the AFM tip-induced oxidation of the top groups of monolayers on oxidefree silicon can be reduced by 2 V for the methyl-terminated hexadecyl monolayer and even by 3.5 V for the active NHS-ester-terminated undecyl monolayer, in comparison to a methyl-terminated octadecyl trichlorosilane (OTS) monolayer on oxidized silicon. Upon such local mild oxidation, the active NHS ester group of the NHS-UA monolayer is selectively cleaved off to generate carboxyl-containing monolayer nanopatterns, opening further possibilities for subsequent patterned multifunctionalization.
机译:已经对组装在氢封端的(即未氧化的)硅上的十六烷基单层和N-羟基琥珀酰亚胺(NHS)酯官能化的十一烷基(NHS-UA)单层进行了导电AFM的局部探针氧化实验。研究了单层顶部末端基团的轻度氧化和下面的硅深层氧化为氧化硅的氧化条件。结果表明,对于AFM尖端诱导的无氧硅单层上层基团的氧化,其偏置阈值对于甲基封端的十六烷基单层可以降低2 V,对于活性NHS-酯封端的十一烷基甚至可以降低3.5V。与氧化硅上的甲基封端的十八烷基三氯硅烷(OTS)单层相比。在这种局部温和的氧化作用下,NHS-UA单层的活性NHS酯基被选择性地裂解掉,以生成含羧基的单层纳米图案,从而为后续的图案化多功能化提供了更多可能性。

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