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Growth of Wrinlde-Free Graphene on Texture-Controlled Platinum Films and Thermal-Assisted Transfer of Large-Scale Patterned Graphene

机译:在结构受控的铂薄膜上无Wrinlde石墨烯的生长和大规模图案化石墨烯的热辅助转移

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摘要

Growth of large-scale patterned, wrinkle-free graphene and the gentle transfer technique without further damage are most important requirements for the practical use of graphene. Here we report the growth of wrinkle-free, strictly uniform monolayer graphene films by chemical vapor deposition on a platinum (Pt) substrate with texture-controlled giant grains and the thermal-assisted transfer of large-scale patterned graphene onto arbitrary substrates. The designed Pt surfaces with limited numbers of grain boundaries and improved surface perfectness as well as small thermal expansion coefficient difference to graphene provide a venue for uniform growth of monolayer graphene with wrinkle-free characteristic. The thermal-assisted transfer technique allows the complete transfer of large-scale patterned graphene films onto arbitrary substrates without any ripples, tears, or folds. The transferred graphene shows high crystalline quality with an average carrier mobility of similar to 5500 cm(2) V-1 s(-1) at room temperature. Furthermore, this transfer technique shows a high tolerance to variations in types and morphologies of underlying substrates.
机译:大规模图案化,无皱纹的石墨烯的生长以及无进一步损害的柔和转移技术是石墨烯实际应用的最重要要求。在这里,我们报告了通过化学气相沉积在具有纹理控制的巨型晶粒的铂(Pt)衬底上以及将大尺寸图案化石墨烯热辅助转移到任意衬底上而产生的无皱纹,严格均匀的单层石墨烯薄膜的生长。设计的Pt表面具有有限数量的晶界和改善的表面完整性以及与石墨烯的较小热膨胀系数差异,为具有无皱纹特性的单层石墨烯的均匀生长提供了场所。热辅助转移技术可将大规模的图案化石墨烯薄膜完全转移到任意基材上,而不会产生波纹,撕裂或折叠。转移的石墨烯在室温下显示出高结晶质量,平均载流子迁移率类似于5500 cm(2)V-1 s(-1)。此外,这种转移技术显示出对下层基板的类型和形态变化的高度耐受性。

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