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Electronic transport and mechanical properties of phosphorus- and phosphorus-nitrogen-doped carbon nanotubes

机译:磷和磷氮掺杂的碳纳米管的电子输运和力学性能

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摘要

We present a density functional theory study of the electronic structure, quantum transport and mechanical properties of recently synthesized phosphorus (P) and phosphorus-nitrogen (PN) doped single-walled carbon nanotubes. The results demonstrate that substitutional P and PN doping creates localized electronic states that modify the electron transport properties by acting as scattering centers. Nonetheless, for low doping concentrations (1 doping site per ~ 200 atoms), the quantum conductance for metallic nanotubes is found to be only slightly reduced. The substitutional doping also alters the mechanical strength, leading to a 50% reduction in the elongation upon fracture, while Young's modulus remains approximately unchanged. Overall, the PN- and P-doped nanotubes display promising properties for components in composite materials and, in particular, for fast response and ultra sensitive sensors operating at the molecular level.
机译:我们目前对最近合成的磷(P)和磷氮(PN)掺杂的单壁碳纳米管的电子结构,量子传输和机械性能进行密度泛函理论研究。结果表明,P和PN的替代掺杂产生了局部电子态,该电子态通过充当散射中心来改变电子传输特性。但是,对于低掺杂浓度(每200个原子有1个掺杂位点),发现金属纳米管的量子电导仅略有降低。替代掺杂也改变了机械强度,导致断裂伸长率降低了50%,而杨氏模量保持大致不变。总体而言,PN和P掺杂的纳米管对复合材料中的组件显示出有希望的性能,尤其是在分子水平上运行的快速响应和超灵敏传感器。

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