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Characteristics of silicon-based Sagnac optical switches using magneto-optical micro-ring array

机译:磁光学微环阵列硅基光学开关的特性

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摘要

The miniaturization and integration of optical switches are necessary for photonic switching networks and the utilization of magneto optical effects is a promising candidate. We propose a Sagnac optical switch chip based on the principle of nonreciprocal phase shift (NPS) of the magneto-optical (MO) micro-ring (MOMR) array, composed of SiO2/Si/Ce:YIG/SGGG. The MO switching function is realized by controlling the drive current in the snake-like metal microstrip circuit layered on the MOMRs. The transmission characteristics of the Sagnac MO switch chip dependent on magnetization intensity, waveguide coupling coefficient and waveguide loss are simulated. By optimizing the coupling coefficients, we design an MO switch using two serial MOMRs with a circumference of 38.37m, and the 3dB bandwidth and the extinction ratio are respectively up to 1.6nm and 50dB for the waveguide loss coefficient of a=1 x 10-4 mu m(-1).. And the switching magnetization can be further reduced by increasing the number of parallel MOMRs. The frequency response of the MO Sagnac switch is analyzed as well.
机译:光学开关的小型化和集成对于光子开关网络是必要的,并且磁光效应的利用是一个有前途的候选者。我们提出了一种基于磁光(MO)微环(MOMR)阵列的非探测相移(NPS)的原理的SAGNAC光开关芯片,由SiO2 / Si / Ce:Yig / SigGG组成。通过控制在MOMR上层叠的蛇状金属微带电路中的驱动电流来实现MO切换功能。模拟了磁化强度,波导耦合系数和波导损耗的Sagnac Mo开关芯片的传输特性。通过优化耦合系数,我们使用两个串行MOMRS设计MO交换机,其圆周为38.37m,3DB带宽和消光比分别高达1.6nm,50dB,用于a = 1 x 10-的波导损耗系数。通过增加并行MOMRS的数量,可以进一步降低4μm(-1)..并且可以进一步降低开关磁化。也分析了Mo Sagnac开关的频率响应。

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