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Photolithographic fabrication of high-voltage output integrated all-solid-state planar on-chip micro-supercapacitors

机译:高压输出集成全固态平面片上的光刻制造芯片微型超级超级电容器

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摘要

Nowadays, the integration of energy storage micro-devices has attracted more and more attention. The integration of planar on-chip micro-supercapacitors (MSCs) not only supplies a higher voltage output, but also meets the requirements of different devices for output voltage by adjusting the number of integrated MSCs. Here, we show an integrated all-solid-state planar on-chip MSC, which based on reduced graphene oxide film with photolithography technology. This series of MSCs can support 2 V output voltage. In addition, it also possessed better electrochemical performance, and its area capacitance, stack capacitance, energy density, and power density had reached 9.48 mu F cm(-2), 7.90 F cm(-3), 1.10 mWh cm(-3)and 12.7 W cm(-3)at an output voltage of 2 V. Meanwhile, it had a better cycle stability. After 10,000 cycles, 98.5% of the capacitor could be retained. If such a planar on-chip MSC is highly integrated, its electrochemical properties will be greatly improved, which will greatly promote the development of MSCs.
机译:如今,储能微型设备的整合吸引了越来越多的关注。平面上片上微型超级电容器(MSCs)的集成不仅提供了更高的电压输出,还可以通过调整集成MSC的数量来满足不同设备的要求。在这里,我们展示了一种集成的全固态平面片上的MSC,其基于具有光刻技术的石墨烯氧化膜的还原。该系列MSC可以支持2 V输出电压。此外,它还具有更好的电化学性能,其面积电容,堆叠电容,能量密度和功率密度达到9.48 mu f cm(-2),7.90 f cm(-3),1.10 mwh cm(-3)和12.7W cm(-3)在2V的输出电压下,同时,它具有更好的循环稳定性。 10,000个循环后,可以保留98.5%的电容器。如果这种平面的片上MSC高度集成,其电化学性质将大大提高,这将大大促进MSC的发展。

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