首页> 外文期刊>Advanced Powder Technology: The internation Journal of the Society of Powder Technology, Japan >Densification of AlN ceramics by spark plasma sintering under 1550 degrees C
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Densification of AlN ceramics by spark plasma sintering under 1550 degrees C

机译:在1550摄氏度下通过火花等离子体烧结对AlN陶瓷进行致密化

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We fabricated AlN ceramics at sintering temperatures with a minimum of 1450 degrees C using spark plasma sintering (SPS) with Y2O3-CaO-B or Y2O3-CaO-LaB6 sintering additives. The relative densities of the AlN ceramics sintered at 1500 degrees C for 10 min with a uniaxial pressure of 50 MPa exceeded 98%, indicating sufficient densification. However, with decreasing the sintering temperature to 1450 degrees C, the relative densities were decreased to similar to 90%. An increase in the uniaxial pressure to 100 MPa or the extension of sintering time to 30 min were found to promote the densification of AlN ceramics. The relative densities of the AlN ceramics sintered reached 99% even at a sintering temperature of 1450 degrees C. The samples had dense and fine textures with an average grain size of similar to 1 mu m. The thermal conductivities of the samples varied with relative density between 30 and 80 W m(-1) K-1. (C) 2015 The Society of Powder Technology Japan. Published by Elsevier B.V. and The Society of Powder Technology Japan. All rights reserved.
机译:我们使用Y2O3-CaO-B或Y2O3-CaO-LaB6烧结添加剂通过火花等离子体烧结(SPS)在最低1450摄氏度的烧结温度下制造AlN陶瓷。在1500℃下以50MPa的单轴压力烧结10分钟的AlN陶瓷的相对密度超过98%,表明充分的致密化。然而,随着烧结温度降低到1450℃,相对密度降低到相似的90%。发现单轴压力增加到100 MPa或烧结时间延长到30分钟可以促进AlN陶瓷的致密化。即使在1450℃的烧结温度下,烧结的AlN陶瓷的相对密度也达到99%。样品具有致密且细小的织构,平均晶粒尺寸类似于1μm。样品的热导率随相对密度在30和80 W m(-1)K-1之间变化。 (C)2015年日本粉末技术学会。由Elsevier B.V.和日本粉末技术学会出版。版权所有。

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