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首页> 外文期刊>Current applied physics: the official journal of the Korean Physical Society >Structure and magnetoresistive properties of three -layer thin films of spin-valve type
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Structure and magnetoresistive properties of three -layer thin films of spin-valve type

机译:三层薄膜的旋转阀型结构和磁阻性能

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摘要

Three-layer thin films of spin-valve type Co/.u/NixFe100- x at x = 20-80 at.% were prepared by electron-beam sputter deposition. The investigated phase state and magnetoresistive properties were done for as-deposited and annealed to 400, 550, and 700 K films. The measurements of field dependences of magnetoresistance were held at different temperatures. It was demonstrated that phase state, crystal structure, and magnetoresistive properties of Co/.u/NixFe100- x systems strongly dependent on both NixFe100- x composition NixFe100- x and heat treatment conditions.
机译:X = 20-80的旋转阀型CO / NIXFE100- X的三层薄膜。%通过电子束溅射沉积制备。 对所研究的相状态和磁阻性能进行沉积并退火至400,550和700k薄膜。 在不同的温度下保持磁阻的场依赖性的测量。 据证明了CO / .U / NIXFE100- X系统的相状态,晶体结构和磁阻性能,该系统强烈依赖于NIXFE100- X成分NIXFE100- X和热处理条件。

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