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Solution-Based Synthesis of a CdS Nanoparticle/ZnO Nanowire Heterostructure Array

机译:CdS纳米粒子/ ZnO纳米线异质结构阵列的基于溶液的合成

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CdS nanoparticle (NP)/ZnO nanowire (NW) heterostructure arrays were fabricated by a two-step chemical solution deposition method. First, vertically aligned ZnO nanowire arrays were grown on a substrate from Zn(NO3)(2) (10 mM) and an aqueous ammonia (pH similar to 11) solution at 95 degrees C for 6 h. Then, CdS nanoparticles were deposited on the ZnO nanowire array in a chemical bath containing CdSO4, thiourea, and an aqueous ammonia solution (molar ratio of 1:5:500) at 60 degrees C. The effects of deposition reaction conditions, such as solution concentrations and deposition time, were investigated. Synthesized US NP/ZnO NW heterostructures were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and transmission electron microscopy (TEM), and their optical absorption property was measured by light absorbance spectrometry. As the solution concentrations and deposition time increased, the sizes and density of CdS nanoparticles on the surfaces of ZnO nanowires increased and the visible-light absorption capability was improved. The CdS NP/ZnO NW heterostructure arrays presented here offer promising applications in solar-energy converting devices. The photoelectrochemical cells using CdS NP/ZnO NW heterostructure arrays as photoelectrodes showed enhanced photocurrent characteristics compared with the photoelectrode cell of a bare ZnO nanowire array.
机译:通过两步化学溶液沉积法制备了CdS纳米粒子(NP)/ ZnO纳米线(NW)异质结构阵列。首先,将垂直对齐的ZnO纳米线阵列在Zn(NO3)(2)(10 mM)和氨水(pH类似于11)的溶液中于95摄氏度下生长6小时。然后,将CdS纳米颗粒在60 C的化学浴中沉积在ZnO纳米线阵列上,该化学浴包含CdSO4,硫脲和氨水溶液(摩尔比为1:5:500)。沉积反应条件(例如溶液)的影响研究了浓度和沉积时间。通过扫描电子显微镜(SEM),X射线衍射(XRD)和透射电子显微镜(TEM)对合成的US NP / ZnO NW异质结构进行了表征,并通过光吸收光谱法测量了它们的光吸收性能。随着溶液浓度和沉积时间的增加,ZnO纳米线表面CdS纳米粒子的尺寸和密度增加,可见光吸收能力提高。本文介绍的CdS NP / ZnO NW异质结构阵列在太阳能转换设备中提供了有希望的应用。与裸露的ZnO纳米线阵列的光电极电池相比,使用CdS NP / ZnO NW异质结构阵列作为光电极的光电化学电池显示出增强的光电流特性。

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