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Charge Transfer and Interface Engineering of the Pentacene and MoS_2 Monolayer Complex

机译:五章和MOS_2单层复合物的电荷转移和界面工程

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摘要

Molecular doping of monolayer MoS_2 provides a great opportunity to modulate its electronic properties for the potential applications in high performance devices. Density functional theory computations are performed to investigate the charge transfer and electrostatic potential modulation upon the adsorption of pentacene molecule on the surface of MoS_2 monolayer (ML). Theoretical calculations indicate that interfacial charge transfer is negligible between pentacene and 2H-MoS_2 ML while significant in the pentacene/1T-MoS_2 ML complex, which is attributed to the match of energy levels near the Fermi level in the latter case. Moreover, molecular doping of pentacene induces substantial structure changes of the substrate resulting in large adsorption energy, which helps stabilize the 1T-MoS_2 ML. Depending on different substrate phases and doping configurations, the interfacial dipole barrier and related work function of MoS_2 ML may be modulated in a wide range of the order of about 1 eV. The findings therefore shed light on the possibility of developing the desired organic/inorganic complex for electrical and optoelectronic devices by molecular doping via charge transfer modulation and interface engineering.
机译:单层MOS_2的分子掺杂提供了调制其在高性能设备中潜在应用的电子特性的绝佳机会。进行密度函数理论计算以研究在MOS_2单层(M1)表面上的五苯分子吸附时的电荷转移和静电电位调节。理论计算表明,五苯和2H-MOL_2mL之间的界面电荷转移可忽略不计,同时在五价/ 1T-MOS_2mL复合物中显着,这归因于后一种情况下的费米水平附近的能量水平的匹配。此外,五烯烯的分子掺杂诱导基材的大量结构变化导致大吸附能量,这有助于稳定1T-MOS_2mL。根据不同的基板相和掺杂配置,可以在大约1eV的宽量范围内调制MOS_2mL的界面偶极屏障和相关功函数。因此,通过电荷转移调制和界面工程,通过分子掺杂发出用于电气和光电器件的所需有机/无机复合物的可能性。

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