Resistive Switching Properties through Iodine Migrations of a Hybrid Perovskite Insulating Layer

摘要

This study reports a low-temperature processable, resistive switching (RS) device based on an inorganic–organic hybrid perovskite, i.e., methylammonium lead iodide (CH_3NH_3PbI_3 or MAPbI_3) via a fast deposition–crystallization method, as the multifunctional insulator layer to form metal/insulator/ metal structure in which Al and p+-Si wafer are used as the top and the bottom metal electrodes, respectively. The MAPbI_3-RS device shows acceptable RS characteristics with a switching window of 103 at a low voltage region (≈5 V), a stable endurance during 200 cycles, and a high retention for a prolonged time at 104 s. The operation mechanism of the MAPbI_3-RS device is based on ion (simultaneously vacancy) migration, especially iodine ions, which is analogous to that of oxygen ions in the conventional oxidebased RS devices, confirmed through X-ray photoelectron spectroscopy and energy-dispersive X-ray spectroscopy measurements. Furthermore, unusual multiresistance states are achieved from the MAPbI_3-RS device under light illumination due to the photosensitivity of MAPbI_3.